Ga2O3 Epitaxy

Fa'amatalaga Puupuu:

Ga2O3Epitaxy– Fa'aleleia au masini fa'aeletonika ma optoelectronic maualuga ma le Semicera's Ga2O3Epitaxy, ofoina atu le fa'atusalia fa'atinoga ma le fa'amaoni mo fa'aoga semiconductor fa'alautele.


Fa'amatalaga Oloa

Faailoga o oloa

Semiceraofo atu ma le mitamitaGa2O3Epitaxy, o se fofo faʻaonaponei ua mamanuina e tuleia ai tuaoi o eletise eletise ma optoelectronics. O lenei tekinolosi epitaxial alualu i luma e faʻaaogaina mea uiga ese o le Gallium Oxide (Ga2O3) e tuʻuina atu faʻatinoga sili atu i talosaga manaʻomia.

Vaega Autu:

• Avanoa Lautele Avanoa: Ga2O3Epitaxyo lo'o fa'aalia ai se va'a tele-lautele, fa'ataga mo volisi malepelepe maualuga ma fa'agaioiga lelei i si'osi'omaga maualuga.

Amioga vevela maualuga: O le epitaxial layer e maua ai le lelei tele o le faʻaogaina o le vevela, faʻamautinoaina le faʻaogaina o le faʻaogaina e tusa lava pe i lalo o le maualuga o le vevela, faʻapitoa mo masini maualuga.

Tulaga Sili Mea: Ausia le tulaga maualuga tioata ma ni faaletonu laiti, faʻamautinoaina le lelei o le faʻatinoga o masini ma le umi o le ola, aemaise lava i faʻaoga taua e pei o transistors eletise ma UV detectors.

Fetuuna'i i Talosaga: E fetaui lelei mo eletise eletise, talosaga RF, ma optoelectronics, e maua ai se faavae faʻalagolago mo masini semiconductor e sosoo ai.

 

Saili le gafatia oGa2O3Epitaxyfa'atasi ai ma fofo fou a Semicera. O a matou oloa epitaxial ua mamanuina ina ia ausia tulaga maualuga o le lelei ma le faʻatinoga, e mafai ai e au masini ona faʻaogaina ma le maualuga ma le faʻamaoni. Filifili Semicera mo tekonolosi semiconductor pito sili ona lata mai.

Aitema

Gaosiga

Suesuega

Faafoliga

Parata tioata

Polytype

4H

Fa'asagaga i luga o mea sese

<11-20 >4±0.15°

Fa'aeletise Parata

Fa'amama

n-ituaiga Nitrogen

Tete'e

0.015-0.025ohm·cm

Fa'ailoga Fa'ainisinia

Diamita

150.0±0.2mm

mafiafia

350±25 μm

Primary flat orientation

[1-100]±5°

Muamua mafolafola umi

47.5±1.5mm

Lua mafolafola

Leai

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

punou

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

A'ai

≤35 μm

≤45 μm

≤55 μm

Luma(Si-foliga) talatala(AFM)

Ra≤0.2nm (5μm*5μm)

Fauga

Micropipe density

<1 ae/cm2

<10 ea/cm2

<15 ea/cm2

Uamea eleelea

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tulaga Luma

Luma

Si

Fa'ai'uga luga

Si-foliga CMP

fasimea

≤60ea/wafer (tele≥0.3μm)

NA

Masisi

≤5ea/mm. Fa'aputuga umi ≤Diamita

Fa'aputuga umi≤2*Diamita

NA

Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina

Leai

NA

Ta'otoga meataalo/indents/ gau/papa hex

Leai

Polytype vaega

Leai

Vaega fa'aopoopo≤20%

Vaega fa'aopoopo≤30%

Faailoga leisa pito i luma

Leai

Tulaga Tulaga

Fa'ai'u tua

C-foliga CMP

Masisi

≤5ea/mm, Fa'aputuga umi≤2* Diamita

NA

faaletonu i tua

Leai

Talatala tua

Ra≤0.2nm (5μm*5μm)

Faailoga leisa tua

1 mm (mai le pito i luga)

pito

pito

Chamfer

afifiina

afifiina

Epi-sauni ma fa'apipi'i gaogao

afifiina kaseti tele-wafer

*Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD.

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SiC wafers

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