Ga2O3 Su'ega

Fa'amatalaga Puupuu:

Ga2O3Alafua- Tatala avanoa fou i le eletise eletise ma optoelectronics ma Semicera's Ga2O3Lapisi, fa'ainisinia mo fa'atinoga fa'apitoa i fa'aoga maualuga-voltage ma fa'alava.


Fa'amatalaga Oloa

Faailoga o oloa

Semicera e mitamita e tuʻuina atu leGa2O3Alafua, o se mea pito sili ona lata mai ua sauni e toe faʻafouina le eletise eletise ma le optoelectronics.Gallium Oxide (Ga2O3) mea'aiua lauiloa mo latou ultra-lautele bandgap, ua avea ai ma mea lelei mo masini maualuga ma maualuga-vave.

 

Vaega Autu:

• Ultra-Wide Bandgap: Ga2O3 o lo'o ofoina atu se fusi fa'amau e tusa ma le 4.8 eV, e matua fa'aleleia ai lona gafatia e taulima ai volita maualuga ma vevela fa'atusatusa i mea masani e pei o Silicon ma GaN.

• Maualuluga Malolo malepe: Faatasi ai ma se fanua malepe tulaga ese, leGa2O3Alafuae lelei atoatoa mo masini e manaʻomia ai le maualuga-voltage faʻagaioiga, faʻamautinoa le sili atu le lelei ma le faʻamaoni.

• Fa'amautu Fa'avela: O mea e sili atu le mautu o le vevela e talafeagai mo fa'aoga i si'osi'omaga ogaoga, fa'atumauina le fa'atinoga tusa lava pe i lalo o tulaga faigata.

• Talosaga Tele: Lelei mo le faʻaogaina i transistors eletise maualuga, masini optoelectronic UV, ma isi mea, e maua ai se faʻavae malosi mo faiga faʻaeletoroni faʻapitoa.

 

Malamalama i le lumanaʻi o tekonolosi semiconductor ma Semicera'sGa2O3Alafua. Fuafuaina e faʻafetaui le faʻatupulaia o manaʻoga o le eletise maualuga ma le maualuga, o lenei mea faʻapipiʻi e faʻatulagaina se tulaga fou mo le faʻatinoga ma le tumau. Fa'alagolago Semicera e tu'uina atu fofo fou mo au talosaga sili ona lu'itau.

Aitema

Gaosiga

Suesuega

Faafoliga

Parata tioata

Polytype

4H

Fa'asagaga i luga o mea sese

<11-20 >4±0.15°

Fa'aeletise Parata

Fa'amama

n-ituaiga Nitrogen

Tete'e

0.015-0.025ohm·cm

Fa'ailoga Fa'ainisinia

Diamita

150.0±0.2mm

mafiafia

350±25 μm

Primary flat orientation

[1-100]±5°

Muamua mafolafola umi

47.5±1.5mm

Lua mafolafola

Leai

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

punou

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

A'ai

≤35 μm

≤45 μm

≤55 μm

Luma(Si-foliga) talatala(AFM)

Ra≤0.2nm (5μm*5μm)

Fauga

Micropipe density

<1 ae/cm2

<10 ea/cm2

<15 ea/cm2

Uamea eleelea

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tulaga Luma

Luma

Si

Fa'ai'uga luga

Si-foliga CMP

fasimea

≤60ea/wafer (tele≥0.3μm)

NA

Masisi

≤5ea/mm. Fa'aputuga umi ≤Diamita

Fa'aputuga umi≤2*Diamita

NA

Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina

Leai

NA

Ta'otoga meataalo/indents/ gau/papa hex

Leai

Polytype vaega

Leai

Vaega fa'aopoopo≤20%

Vaega fa'aopoopo≤30%

Faailoga leisa pito i luma

Leai

Tulaga Tulaga

Fa'ai'u tua

C-foliga CMP

Masisi

≤5ea/mm, Fa'aputuga umi≤2* Diamita

NA

faaletonu i tua

Leai

Talatala tua

Ra≤0.2nm (5μm*5μm)

Faailoga leisa tua

1 mm (mai le pito i luga)

pito

pito

Chamfer

afifiina

afifiina

Epi-sauni ma fa'apipi'i gaogao

afifiina kaseti tele-wafer

*Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD.

tech_1_2_size
SiC wafers

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