Semicera e mitamita e tuʻuina atu leGa2O3Alafua, o se mea pito sili ona lata mai ua sauni e toe faʻafouina le eletise eletise ma le optoelectronics.Gallium Oxide (Ga2O3) mea'aiua lauiloa mo latou ultra-lautele bandgap, ua avea ai ma mea lelei mo masini maualuga ma maualuga-vave.
Vaega Autu:
• Ultra-Wide Bandgap: Ga2O3 o lo'o ofoina atu se fusi fa'amau e tusa ma le 4.8 eV, e matua fa'aleleia ai lona gafatia e taulima ai volita maualuga ma vevela fa'atusatusa i mea masani e pei o Silicon ma GaN.
• Maualuluga Malolo malepe: Faatasi ai ma se fanua malepe tulaga ese, leGa2O3Alafuae lelei atoatoa mo masini e manaʻomia ai le maualuga-voltage faʻagaioiga, faʻamautinoa le sili atu le lelei ma le faʻamaoni.
• Fa'amautu Fa'avela: O mea e sili atu le mautu o le vevela e talafeagai mo fa'aoga i si'osi'omaga ogaoga, fa'atumauina le fa'atinoga tusa lava pe i lalo o tulaga faigata.
• Talosaga Tele: Lelei mo le faʻaogaina i transistors eletise maualuga, masini optoelectronic UV, ma isi mea, e maua ai se faʻavae malosi mo faiga faʻaeletoroni faʻapitoa.
Malamalama i le lumanaʻi o tekonolosi semiconductor ma Semicera'sGa2O3Alafua. Fuafuaina e faʻafetaui le faʻatupulaia o manaʻoga o le eletise maualuga ma le maualuga, o lenei mea faʻapipiʻi e faʻatulagaina se tulaga fou mo le faʻatinoga ma le tumau. Fa'alagolago Semicera e tu'uina atu fofo fou mo au talosaga sili ona lu'itau.
| Aitema | Gaosiga | Suesuega | Faafoliga |
| Fa'a tioata | |||
| Polytype | 4H | ||
| Fa'asagaga i luga ole mea sese | <11-20 >4±0.15° | ||
| Fa'aeletise Parata | |||
| Fa'amamafa | n-ituaiga Nitrogen | ||
| Tete'e | 0.015-0.025ohm·cm | ||
| Fa'ailoga Fa'ainisinia | |||
| Diamita | 150.0±0.2mm | ||
| mafiafia | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Muamua mafolafola umi | 47.5±1.5mm | ||
| Lua mafolafola | Leai | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| punou | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| A'ai | ≤35 μm | ≤45 μm | ≤55 μm |
| Luma(Si-foliga) talatala(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Fauga | |||
| Micropipe density | <1 ae/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Uamea eleelea | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tulaga Luma | |||
| Luma | Si | ||
| Fa'ai'uga luga | Si-foliga CMP | ||
| fasimea | ≤60ea/wafer (tele≥0.3μm) | NA | |
| Masisi | ≤5ea/mm. Fa'aputuga umi ≤Diamita | Fa'aputuga umi≤2*Diamita | NA |
| Pa'u moli/lua/pisa/striations/ta'eta'e/fa'aleagaina | Leai | NA | |
| Ta'otoga meataalo/indents/ gau/papa hex | Leai | ||
| Polytype vaega | Leai | Vaega fa'aopoopo≤20% | Vaega fa'aopoopo≤30% |
| Faailoga leisa pito i luma | Leai | ||
| Tulaga Tulaga | |||
| Fa'ai'u tua | C-foliga CMP | ||
| Masisi | ≤5ea/mm, Fa'aputuga umi≤2* Diamita | NA | |
| faaletonu i tua | Leai | ||
| Talatala tua | Ra≤0.2nm (5μm*5μm) | ||
| Faailoga leisa tua | 1 mm (mai le pito i luga) | ||
| pito | |||
| pito | Chamfer | ||
| afifiina | |||
| afifiina | Epi-sauni ma fa'apipi'i gaogao afifiina kaseti tele-wafer | ||
| *Faamatalaga: "NA" o lona uiga e leai se talosaga O mea e le o taʻua e mafai ona faasino ile SEMI-STD. | |||
